SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY OF ION-BOMBARDED SI(111) AND SI(100) SURFACES

被引：107

作者：

ZANDVLIET, HJW ^{[1
]}

ELSWIJK, HB ^{[1
]}

VANLOENEN, EJ ^{[1
]}

机构：

[1] ARIZONA STATE UNIV, DEPT PHYS, TEMPE, AZ 85287 USA

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.46.7581

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Surfaces of Si(111)-(7 X 7) and Si(100)-(2 X 1) were bombarded by 3-keV Ar+ ions at doses of less-than-or-equal-to 10(12) ions cm-2 to study the effect of individual ion impacts on the atomic structure of surfaces. Atom-resolved images show damaged regions of missing and displaced atoms. Current-imaging tunneling spectroscopy shows rest-atom states in the bombarded areas on Si(111), in agreement with line-scan measurements indicating a monatomic step-height difference between bombarded and unbombarded areas. Upon annealing to 750-degrees-C for 2 min, complete (7 X 7) was restored for the bombarded Si(111) surface whereas ordering of vacancies into line defects was observed for Si(100).

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页码：7581 / 7587

页数：7

相关论文

共 36 条

[1] SPONTANEOUS FORMATION OF STRESS DOMAINS ON CRYSTAL-SURFACES [J].

ALERHAND, OL ;

VANDERBILT, D ;

MEADE, RD ;

JOANNOPOULOS, JD .

PHYSICAL REVIEW LETTERS, 1988, 61 (17) :1973-1976

[2] DEPTH RESOLUTION OF SPUTTER PROFILING [J].

ANDERSEN, HH .

APPLIED PHYSICS, 1979, 18 (02) :131-140

[3] ATOM-RESOLVED SURFACE-CHEMISTRY - THE EARLY STEPS OF SI(111)-7X7 OXIDATION [J].

AVOURIS, P ;

LYO, IW ;

BOZSO, F .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :424-430

[4] ANISOTROPIC VACANCY KINETICS AND SINGLE-DOMAIN STABILIZATION ON SI(100)-2X1 [J].

BEDROSSIAN, P ;

KLITSNER, T .

PHYSICAL REVIEW LETTERS, 1992, 68 (05) :646-649

[5] SURFACE RECONSTRUCTION IN LAYER-BY-LAYER SPUTTERING OF SI(111) [J].

BEDROSSIAN, P ;

KLITSNER, T .

PHYSICAL REVIEW B, 1991, 44 (24) :13783-13786

[6] LAYER-BY-LAYER SPUTTERING AND EPITAXY OF SI(100) [J].

BEDROSSIAN, P ;

HOUSTON, JE ;

TSAO, JY ;

CHASON, E ;

PICRAUX, ST .

PHYSICAL REVIEW LETTERS, 1991, 67 (01) :124-127

[7] ANGULAR-DISTRIBUTION OF GA+ IONS DESORBED BY 3-KEV-ION BOMBARDMENT OF GAAS(001)-(2 X 4) [J].

BLUMENTHAL, R ;

CAFFEY, KP ;

FURMAN, E ;

GARRISON, BJ ;

WINOGRAD, N .

PHYSICAL REVIEW B, 1991, 44 (23) :12830-12836

[8]

CAHILL D, IN PRESS ULTRAMICROS

[9] SPUTTERING OF THE GALLIUM-INDIUM EUTECTIC ALLOY IN THE LIQUID-PHASE [J].

DUMKE, MF ;

TOMBRELLO, TA ;

WELLER, RA ;

HOUSLEY, RM ;

CIRLIN, EH .

SURFACE SCIENCE, 1983, 124 (2-3) :407-422

[10] SURFACE-MORPHOLOGY OF OXIDIZED AND ION-ETCHED SILICON BY SCANNING TUNNELING MICROSCOPY [J].

FEENSTRA, RM ;

OEHRLEIN, GS .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :97-99

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