MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY ZNSE ON (100) SI

[1] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 907 - 913

[2] CHOI HK, 1984, APPL PHYS LETT, V45, P945

[3] THE OPTOELECTRONIC PROPERTIES OF DONORS IN ORGANO-METALLIC GROWN ZINC SELENIDE [J]. PHYSICA B & C, 1983, 116 (1-3): : 508 - 513

[4] CHARACTERISTICS OF GAAS/AIGAAS MODFETS GROWN DIRECTLY ON (100) SILICON [J]. ELECTRONICS LETTERS, 1984, 20 (22) : 945 - 947

[5] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 397 - 399

[6] EPITAXIAL-GROWTH OF HIGH-QUALITY ZNSE ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY AND APPLICATION TO DC ELECTROLUMINESCENT CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 793 - 796

[7] ON THE ELECTRONIC-STRUCTURE OF CLEAN, 2X1 RECONSTRUCTED SILICON (001) SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 313 - 318

[8] MAGNETOREFLECTANCE OF GAMMA6-GAMMA8 EXCITON GROUND-STATE IN CUBIC ZNSE [J]. SOLID STATE COMMUNICATIONS, 1978, 25 (02) : 109 - 112

[9] MOLECULAR-BEAM EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS AND ALGAAS ON SI(100) [J]. APPLIED PHYSICS LETTERS, 1984, 44 (12) : 1149 - 1151

[10] ELECTRICAL AND PHOTO-LUMINESCENCE PROPERTIES OF ZNSE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY - SUBSTRATE-TEMPERATURE EFFECT [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (03): : L144 - L146

[1] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 907 - 913

[2] CHOI HK, 1984, APPL PHYS LETT, V45, P945

[3] THE OPTOELECTRONIC PROPERTIES OF DONORS IN ORGANO-METALLIC GROWN ZINC SELENIDE [J]. PHYSICA B & C, 1983, 116 (1-3): : 508 - 513

[4] CHARACTERISTICS OF GAAS/AIGAAS MODFETS GROWN DIRECTLY ON (100) SILICON [J]. ELECTRONICS LETTERS, 1984, 20 (22) : 945 - 947

[5] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 397 - 399

[6] EPITAXIAL-GROWTH OF HIGH-QUALITY ZNSE ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY AND APPLICATION TO DC ELECTROLUMINESCENT CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 793 - 796

[7] ON THE ELECTRONIC-STRUCTURE OF CLEAN, 2X1 RECONSTRUCTED SILICON (001) SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 313 - 318

[8] MAGNETOREFLECTANCE OF GAMMA6-GAMMA8 EXCITON GROUND-STATE IN CUBIC ZNSE [J]. SOLID STATE COMMUNICATIONS, 1978, 25 (02) : 109 - 112

[9] MOLECULAR-BEAM EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS AND ALGAAS ON SI(100) [J]. APPLIED PHYSICS LETTERS, 1984, 44 (12) : 1149 - 1151

[10] ELECTRICAL AND PHOTO-LUMINESCENCE PROPERTIES OF ZNSE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY - SUBSTRATE-TEMPERATURE EFFECT [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (03): : L144 - L146