RADIATION-RESISTANCE OF INP SOLAR-CELLS UNDER LIGHT ILLUMINATION

被引：18

作者：

ANDO, K

YAMAGUCHI, M

机构：

来源：

关键词：

D O I：

10.1063/1.96005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：846 / 848

页数：3

共 8 条

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[2] MATSUDA S, 1982, JPN J APPL PHYS S, V212, P19
[3] SIBILLE A, UNPUB J ELECTRON MAT
[4] INJECTION-ENHANCED ANNEALING OF INP SOLAR-CELL RADIATION-DAMAGE
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ANDO, K
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 568 - 574
[5] RADIATION-DAMAGE IN INP SINGLE-CRYSTALS AND SOLAR-CELLS
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UEMURA, C
YAMAMOTO, A
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (06) : 1429 - 1436
[6] MINORITY-CARRIER INJECTION ANNEALING OF ELECTRON IRRADIATION-INDUCED DEFECTS IN INP SOLAR-CELLS
YAMAGUCHI, M
ANDO, K
YAMAMOTO, A
UEMURA, C
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (04) : 432 - 434
[7] YAMAMOTO A, 1985, IEEE T ELECTRON DEVI, V32
[8] Yoshida S., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P239