SPATIAL-FREQUENCY BANDWIDTH IN THE PHOTOLITHOGRAPHIC TRANSFER OF SUBMICRON GRATINGS

被引:7
作者
PARRIAUX, O
VUILLIOMENET, H
SIXT, P
CUNY, N
机构
[1] Cent. Suisse d'Electronique et de, Microtechnique SA, Neuchatel
关键词
PHOTOLITHOGRAPHIC MASK TRANSFER; HIGH-SPATIAL-FREQUENCY GRATINGS;
D O I
10.1117/12.200610
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The principle of the photolithographic mask transfer of high-spatial-frequency gratings under the Littrow angle is shown to be so tolerant that a broad spatial-frequency spectrum can be transferred under the same exposure conditions.
引用
收藏
页码:2657 / 2659
页数:3
相关论文
共 4 条
[1]  
CULLMANN E, 1982, P SEMICON E BOSTON
[2]  
ROUMIGUIERES JLA, 1983, Patent No. 4389094
[3]   FABRICATION OF OPTOELECTRONIC DEVICES ON ALGAAS USING ELECTRON-BEAM LITHOGRAPHY [J].
STAUFFER, JM ;
OPPLIGER, Y ;
VASEY, F .
MICROELECTRONIC ENGINEERING, 1991, 13 (1-4) :193-196
[4]   INTEGRATED-OPTICS COMPONENTS AND DEVICES USING PERIODIC STRUCTURES [J].
SUHARA, T ;
NISHIHARA, H .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (06) :845-867