HIGH-RESOLUTION MEASUREMENTS OF LOCALIZED VIBRATIONAL-MODE INFRARED-ABSORPTION OF SI-DOPED GAAS

被引：60

作者：

THEIS, WM

SPITZER, WG

机构：

[1] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90089

[2] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 04期

关键词：

D O I：

10.1063/1.334064

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：890 / 898

页数：9

共 18 条

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[15]

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[16]

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[17] DIRECT EVIDENCE FOR THE SITE OF SUBSTITUTIONAL CARBON IN GAAS USING LOCALIZED VIBRATIONAL-MODE SPECTROSCOPY [J].

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SPITZER, WG .

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[18] DIRECT EVIDENCE FOR THE SITE OF SUBSTITUTIONAL CARBON IMPURITY IN GAAS [J].

THEIS, WM ;

BAJAJ, KK ;

LITTON, CW ;

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APPLIED PHYSICS LETTERS, 1982, 41 (01) :70-72

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