TEMPERATURE-DEPENDENCE OF SILICON WORK FUNCTION BY MEANS OF A RETARDING POTENTIAL TECHNIQUE

被引：4

作者：

BURTON, LC ^{[1
]}

机构：

[1] TEXAS TECH UNIV,DEPT ELECT ENGN,LUBBOCK,TX 79409

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 03期

关键词：

D O I：

10.1063/1.322703

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1189 / 1191

页数：3

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