ION-ASSISTED ETCHING OF SILICON BY MOLECULAR CHLORINE

被引：76

作者：

SANDERS, FHM ^{[1
]}

KOLFSCHOTEN, AW ^{[1
]}

DIELEMAN, J ^{[1
]}

HARING, RA ^{[1
]}

HARING, A ^{[1
]}

DEVRIES, AE ^{[1
]}

机构：

[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1984年 / 2卷 / 02期

关键词：

D O I：

10.1116/1.572601

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：487 / 491

页数：5

相关论文

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