UP CONVERSION OF LUMINESCENCE VIA DEEP CENTERS IN HIGH-PURITY GAAS AND GAALAS EPITAXIAL LAYERS

被引：16

作者：

QUAGLIANO, LG ^{[1
]}

NATHER, H ^{[1
]}

机构：

[1] UNIV STUTTGART,INST PHYS,D-7000 STUTTGART 80,FED REP GER

来源：

关键词：

D O I：

10.1063/1.95319

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：555 / 557

页数：3

共 6 条

[1]

BROSER I, 1961, 1960 P INT C SEM PHY, P771

[2] CHROMIUM-INDUCED UP CONVERSION IN GAP [J].

CLERJAUD, B ;

GENDRON, F ;

PORTE, C .

[3]

HALSTEAD RE, 1961, 1960 P INT C SEM PHY, P776

JOHNSON, EJ ;

KAFALAS, J ;

DAVIES, RW ;

DYES, WA .

[5] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J].

LANG, DV ;

LOGAN, RA .

[6] 2-STEP EXCITATION OF PHOTOLUMINESCENCE IN GAP [J].

SCHINDLER, A ;

BINDEMANN, R ;

KREHER, K .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1973, 59 (02) :439-445