ON THE PROPERTIES OF ZNSE/(NH4)2SX-PRETREATED GAAS HETEROINTERFACES

(NH4)2S(x) pretreatment of a GaAs surface successfully resulted in high-quality ZnSe/GaAs heterointerfaces, which are attractive for applications to heterojunction devices as well as metal-insulator-semiconductor field-effect transistors (MISFETs). In order to overcome the problem of small conduction band offset, which is undesirable for MIS structures, we propose a slight addition of Mg and S to ZnSe, i.e., the ZnMgSSe/GaAs heterointerface.