OPTOGALVANIC MEASUREMENT OF NEGATIVE-IONS IN PLASMA BY SEMICONDUCTOR-LASERS

被引：6

作者：

AMEMIYA, H

SUZUKI, T

SHIGUEOKA, Y

机构：

[1] RIKEN (The Institute of Physical and Chemical Research), Saitama

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 10期

关键词：

Hollow-cathode discharge; Optogalvanic method; Oxygen negative ions; Semiconductor laser;

D O I：

10.1143/JJAP.29.L1915

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical response of plasmas has been measured by irradiating semiconductor lasers to hollow-cathode-type discharges in oxygen. The signal generated by the photodetachment from negative ions has been measured for some discharge condition of currents and pressures. The diagnostic method for obtaining densities of atomic and molecular negative ions in an electronegative gas discharge is described. © 1990 IOP Publishing Ltd.

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页码：L1915 / L1918

页数：4

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