ON THE LONG-RANGE ORDER IN ALGAAS

被引:13
作者
WANG, WI
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D O I
10.1063/1.335805
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O59 [应用物理学];
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页码:3244 / 3245
页数:2
相关论文
共 14 条
[1]  
[Anonymous], 1978, HETEROSTRUCTURE LASE
[2]   RECONSTRUCTIONS OF GAAS AND AIAS SURFACES AS A FUNCTION OF METAL TO AS RATIO [J].
BACHRACH, RZ ;
BAUER, RS ;
CHIARADIA, P ;
HANSSON, GV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :335-343
[3]   ON THE ADJUSTABILITY OF THE ABRUPT HETEROJUNCTION BAND-GAP DISCONTINUITY [J].
BAUER, RS ;
SANG, HW .
SURFACE SCIENCE, 1983, 132 (1-3) :479-504
[4]   THEORY OF ENERGY-BAND LINEUP AT AN ABRUPT SEMICONDUCTOR HETEROJUNCTION [J].
FRENSLEY, WR ;
KROEMER, H .
PHYSICAL REVIEW B, 1977, 16 (06) :2642-2652
[5]   EPITAXIAL STRUCTURES WITH ALTERNATE ATOMIC-LAYER COMPOSITION MODULATION [J].
GOSSARD, AC ;
PETROFF, PM ;
WEIGMANN, W ;
DINGLE, R ;
SAVAGE, A .
APPLIED PHYSICS LETTERS, 1976, 29 (06) :323-325
[6]   ELEMENTARY THEORY OF HETEROJUNCTIONS [J].
HARRISON, WA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :1016-1021
[7]   LONG-RANGE ORDER IN ALXGA1-XAS [J].
KUAN, TS ;
KUECH, TF ;
WANG, WI ;
WILKIE, EL .
PHYSICAL REVIEW LETTERS, 1985, 54 (03) :201-204
[8]   RECONSTRUCTION MECHANISM AND SURFACE-STATE DISPERSION FOR SI(111)-(2 X 1) [J].
NORTHRUP, JE ;
COHEN, ML .
PHYSICAL REVIEW LETTERS, 1982, 49 (18) :1349-1352
[9]   ALLOY CLUSTERING IN GA1-XALXAS COMPOUND SEMICONDUCTORS GROWN BY MOLECULAR-BEAM EPITAXY [J].
PETROFF, PM ;
CHO, AY ;
REINHART, FK ;
GOSSARD, AC ;
WIEGMANN, W .
PHYSICAL REVIEW LETTERS, 1982, 48 (03) :170-173
[10]  
Phillips J.C., 1973, BONDS BANDS SEMICOND