RAPID SYNTHESIS OF GAP AND GAAS FROM SOLID-STATE PRECURSORS

被引：44

作者：

TREECE, RE ^{[1
]}

MACALA, GS ^{[1
]}

KANER, RB ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES,DEPT CHEM & BIOCHEM,LOS ANGELES,CA 90024

来源：

CHEMISTRY OF MATERIALS | 1992年 / 4卷 / 01期

关键词：

D O I：

10.1021/cm00019a004

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

[No abstract available]

引用

页码：9 / 11

页数：3

共 15 条

[1]

BONNEAU PR, UNPUB INORG SYNTH

[2] DESIGN OF A MONOMERIC ARSINOGALLANE AND CHEMICAL CONVERSION TO GALLIUM-ARSENIDE [J].

BYRNE, EK ;

PARKANYI, L ;

THEOPOLD, KH .

SCIENCE, 1988, 241 (4863) :332-334

[3] III/V PRECURSORS WITH P-H OR AS-H BONDS - A LOW-TEMPERATURE ROUTE TO GALLIUM-ARSENIDE AND GALLIUM-PHOSPHIDE [J].

COWLEY, AH ;

HARRIS, PR ;

JONES, RA ;

NUNN, CM .

ORGANOMETALLICS, 1991, 10 (03) :652-656

[4] ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION OF III/V COMPOUND SEMICONDUCTORS WITH NOVEL ORGANOMETALLIC PRECURSORS [J].

COWLEY, AH ;

BENAC, BL ;

EKERDT, JG ;

JONES, RA ;

KIDD, KB ;

LEE, JY ;

MILLER, JE .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1988, 110 (18) :6248-6249

[5]

CUMBERBATCH TJ, 1990, MATER RES SOC SYMP P, V164, P129

[6]

DAVID LD, 1989, Patent No. 4798701

[7]

GROVENOR CRM, 1989, MICROELECTRONIC MATE

[8]

LIDE DR, 1985, JANAF THERMOCHEMICAL

[9]

STREETMAN BG, 1990, SOLID STATE ELECTRON

[10]

SZE SM, 1981, PHYSICS SEMICONDUCTO

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