TEMPERATURE CHARACTERISTICS OF (INAS)1/(GAAS)4 SHORT-PERIOD SUPERLATTICES QUANTUM-WELL LASER

被引：9

作者：

DUTTA, NK

CHAND, N

LOPATA, J

WETZEL, R

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 17期

关键词：

D O I：

10.1063/1.109521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature characteristics of (InAs)1/(GaAs)4 superlattice quantum well lasers are analyzed both experimentally and theoretically. The measured threshold current density as a function of temperature is characterized by a T0=135 K for 115 K < T < 380 K and by T0 = 47 K for 420 K < T < 480 K. The radiative and nonradiative recombination rates and the gain versus carrier density relationship in monolayer superlattice structures are calculated. Inclusion of the nonradiative recombination process is necessary to explain the observed high-temperature characteristics of these lasers.

引用

页码：2018 / 2020

页数：3

共 14 条

[1]

AGRAWAL GP, 1986, LONG WAVELENGTH SEMI, pCH9

[2]

AGRAWAL GP, 1986, LONG WAVELENGTH SEMI, pCH3

[3] EXCELLENT UNIFORMITY AND VERY LOW (LESS-THAN-50 A/CM2) THRESHOLD CURRENT-DENSITY STRAINED INGAAS QUANTUM-WELL DIODE-LASERS ON GAAS SUBSTRATE [J].