ENHANCEMENT OF DAMAGE CREATION AT METAL-SILICON INTERFACES DURING H+ AND HE+ IRRADIATION

被引:4
作者
IWAMI, H
TROMP, RM
VANLOENEN, EJ
SARIS, FW
机构
来源
PHYSICA B & C | 1983年 / 116卷 / 1-3期
关键词
D O I
10.1016/0378-4363(83)90269-3
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:328 / 331
页数:4
相关论文
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