SILICON FIBERS PRODUCED BY HIGH-PRESSURE LCVD

被引:10
作者
NORDINE, PC
DELAVEAUX, SC
WALLENBERGER, FT
机构
[1] DUPONT CO INC,CENT RES,EXPTL STN,WILMINGTON,DE 19880
[2] UNIV ILLINOIS,DEPT MAT SCI & ENGN,URBANA,IL 61801
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1993年 / 57卷 / 01期
关键词
D O I
10.1007/BF00331224
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using a unique fiber-growth control mechanism and high-reaction pressures (> 1 bar), silicon fibers were grown by laser-assisted chemical vapor deposition (LCVD) from silane near the focal point of a cw Nd:YAG laser beam. Fiber-growth rates ranged from < 1 to 500 mum/s and fiber tip temperatures from 525 to 1412-degrees-C. At low fiber-tip temperatures (< 600-degrees-C) silicon fibers yielding glassy fracture were obtained. Some crystallinity was observed by X-ray diffraction. Polycrystalline silicon fibers were formed at intermediate temperatures, single-crystal silicon fibers at high-laser intensities and high-tip temperatures. The single crystal LCVD silicon fibers were formed by a vapor-liquid-solid (VLS) mechanism. Single-crystal VLS-LCVD silicon fibers were also obtained from liquid silicon-metal alloys by initiating fiber growth from the end of thin palladium, gold and platinum wires.
引用
收藏
页码:97 / 100
页数:4
相关论文
共 13 条
  • [1] BAUERLE D, 1982, APPL PHYS LETT, V40, P819, DOI 10.1063/1.93272
  • [2] LASER GROWN SINGLE-CRYSTALS OF SILICON
    BAUERLE, D
    LEYENDECKER, G
    WAGNER, D
    BAUSER, E
    LU, YC
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 30 (03): : 147 - 149
  • [3] BAUERLE D, 1982, APPL PHYS B-PHOTO, V28, P267
  • [4] BAUERLE D, 1983, MATER RES SOC S P, V17, P19
  • [5] DOPPELBAUER J, 1987, NATO ASI SERIES E, V134, P277
  • [6] Edwards D. F., 1985, HDB OPTICAL CONSTANT, P547
  • [7] Givargizov E.I., 1987, HIGHLY ANISOTROPIC C
  • [8] SEEGER K, 1989, SPRINGER SER SOLID S, V40, P439
  • [9] SIEGEL R, 1981, THERMAL RAD HEAT TRA, P20
  • [10] STRONG, SMALL DIAMETER, BORON FIBERS BY LCVD
    WALLENBERGER, FT
    NORDINE, PC
    [J]. MATERIALS LETTERS, 1992, 14 (04) : 198 - 202