LASER GROWN SINGLE-CRYSTALS OF SILICON

被引：28

作者：

BAUERLE, D ^{[1
]}

LEYENDECKER, G ^{[1
]}

WAGNER, D ^{[1
]}

BAUSER, E ^{[1
]}

LU, YC ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1983年 / 30卷 / 03期

关键词：

D O I：

10.1007/BF00620533

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：147 / 149

页数：3

共 10 条

[1]

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[2]

BAUERLE D, 1983, LASER DIAGNOSTICS PH

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[4] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J].

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[5]

EHRLICH DJ, 1981, APPL PHYS LETT, V39, P957, DOI 10.1063/1.92624

[6]

KRAUTER W, UNPUB

[7] RAPID-DETERMINATION OF APPARENT ACTIVATION-ENERGIES IN CHEMICAL VAPOR-DEPOSITION [J].

LEYENDECKER, G ;

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GEITTNER, P ;

LYDTIN, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (01) :157-160

[8] LASER-INDUCED CHEMICAL VAPOR-DEPOSITION OF CARBON [J].

LEYENDECKER, G ;

BAUERLE, D ;

GEITTNER, P ;

LYDTIN, H .

APPLIED PHYSICS LETTERS, 1981, 39 (11) :921-923

[9] CADMIUM DEPOSITION ON TRANSPARENT SUBSTRATES BY LASER-INDUCED DISSOCIATION OF CD(CH3)2 AT VISIBLE WAVELENGTHS [J].

RYTZFROIDEVAUX, Y ;

SALATHE, RP ;

GILGEN, HH ;

WEBER, HP .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 27 (03) :133-138

[10]

SIRTL E, 1961, Z METALLKD, V52, P529

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