CHARACTERIZATION OF SUBSURFACE DAMAGE IN GAAS PROCESSED BY GA+ FOCUSED ION-BEAM-ASSISTED CL-2 ETCHING USING PHOTOLUMINESCENCE

被引：50

作者：

TANEYA, M

SUGIMOTO, Y

AKITA, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 03期

关键词：

D O I：

10.1063/1.344439

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1375 / 1381

页数：7

共 26 条

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