EFFECTS OF ALLOYING AND HYDROSTATIC-PRESSURE ON THE LUMINESCENCE OF MN IN GAAS

[1] ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1987, 35 (12): : 6182 - 6194

[2] TRANSITION-METAL IMPURITIES IN III-V COMPOUNDS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (19): : 3615 - 3661

[3] ON THE POSITION OF ENERGY-LEVELS RELATED TO TRANSITION-METAL IMPURITIES IN III-V SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (27): : L961 - L964

[4] Nilsson S., 1986, Materials Science Forum, V10-12, P615, DOI 10.4028/www.scientific.net/MSF.10-12.615

[5] MECHANISM FOR SPATIAL SEPARATION OF CHARGE-CARRIERS IN INHOMOGENEOUS SEMICONDUCTOR ALLOYS [J]. PHYSICAL REVIEW B, 1986, 33 (12): : 8776 - 8778

[6] DIRECT EVIDENCE FOR RANDOM-ALLOY SPLITTING OF CU LEVELS IN GAAS1-XPX [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (15) : 1501 - 1503

[7] TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS - THEIR CONNECTION WITH BAND LINEUPS AND SCHOTTKY BARRIERS [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (22) : 2367 - 2370

[8] VANDEWALLE CG, 1987, COMMUNICATION

[9] WALUKIEWICZ W, 1987, COMMUNICATION

[10] ZUNGER A, 1986, SOLID STATE PHYS, V39, P275, DOI [10.1016/S0081-1947(08)60371-9, DOI 10.1016/S0081-1947(08)60371-9]

[1] ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1987, 35 (12): : 6182 - 6194

[2] TRANSITION-METAL IMPURITIES IN III-V COMPOUNDS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (19): : 3615 - 3661

[3] ON THE POSITION OF ENERGY-LEVELS RELATED TO TRANSITION-METAL IMPURITIES IN III-V SEMICONDUCTORS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (27): : L961 - L964

[4] Nilsson S., 1986, Materials Science Forum, V10-12, P615, DOI 10.4028/www.scientific.net/MSF.10-12.615

[5] MECHANISM FOR SPATIAL SEPARATION OF CHARGE-CARRIERS IN INHOMOGENEOUS SEMICONDUCTOR ALLOYS [J]. PHYSICAL REVIEW B, 1986, 33 (12): : 8776 - 8778

[6] DIRECT EVIDENCE FOR RANDOM-ALLOY SPLITTING OF CU LEVELS IN GAAS1-XPX [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (15) : 1501 - 1503

[7] TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS - THEIR CONNECTION WITH BAND LINEUPS AND SCHOTTKY BARRIERS [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (22) : 2367 - 2370

[8] VANDEWALLE CG, 1987, COMMUNICATION

[9] WALUKIEWICZ W, 1987, COMMUNICATION

[10] ZUNGER A, 1986, SOLID STATE PHYS, V39, P275, DOI [10.1016/S0081-1947(08)60371-9, DOI 10.1016/S0081-1947(08)60371-9]