MECHANISM FOR SPATIAL SEPARATION OF CHARGE-CARRIERS IN INHOMOGENEOUS SEMICONDUCTOR ALLOYS

被引：14

作者：

SAMUELSON, L

PISTOL, ME

NILSSON, S

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.33.8776

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：8776 / 8778

页数：3

相关论文

共 20 条

[1] A UNIVERSAL TREND IN THE BINDING-ENERGIES OF DEEP IMPURITIES IN SEMICONDUCTORS
CALDAS, MJ
FAZZIO, A
ZUNGER, A
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (06) : 671 - 673
[2] BAND-GAP ENGINEERING VIA GRADED GAP, SUPER-LATTICE, AND PERIODIC DOPING STRUCTURES - APPLICATIONS TO NOVEL PHOTODETECTORS AND OTHER DEVICES
CAPASSO, F
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 457 - 461
[3] N-I-P-I DOPING SUPER-LATTICES - METASTABLE SEMICONDUCTORS WITH TUNABLE PROPERTIES
DOHLER, GH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 278 - 284
[4] A CRITICAL-REVIEW OF HETEROJUNCTION BAND OFFSETS
DUGGAN, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1224 - 1230
[5] BARRIER CONTROL AND MEASUREMENTS - ABRUPT SEMICONDUCTOR HETEROJUNCTIONS
KROEMER, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 433 - 439
[6] EVIDENCE FOR EXCITON LOCALIZATION BY ALLOY FLUCTUATIONS IN INDIRECT-GAP GAAS1-XPX
LAI, S
KLEIN, MV
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (16) : 1087 - 1090
[7] DEEP-LEVEL IMPURITIES - A POSSIBLE GUIDE TO PREDICTION OF BAND-EDGE DISCONTINUITIES IN SEMICONDUCTOR HETEROJUNCTIONS
LANGER, JM
HEINRICH, H
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (13) : 1414 - 1417
[8] ON THE POSITION OF ENERGY-LEVELS RELATED TO TRANSITION-METAL IMPURITIES IN III-V SEMICONDUCTORS
LEDEBO, LA
RIDLEY, BK
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (27): : L961 - L964
[9] MADELUNG O, 1982, LANDOLTBORNSTEIN N A, V17
[10] Mott N. F., 1979, ELECT PROCESSES NONC