THE EFFECTS OF STRESS-RELAXATION AND ANISOTROPIC MAGNETOSTRICTION ON CHARGED WALLS IN ION-IMPLANTED GARNETS

被引：13

作者：

KRYDER, MH

SAUNDERS, DA

机构：

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1983年 / 19卷 / 05期

关键词：

D O I：

10.1109/TMAG.1983.1062711

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1817 / 1822

页数：6

共 15 条

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[4]

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[5] CHARGED WALL FORMATION MECHANISM IN ION-IMPLANTED CONTIGUOUS DISK BUBBLE-DEVICES [J].

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[6] CHARGED WALL FORMATION AND PROPAGATION ANALYSIS IN ION-IMPLANTED CONTIGUOUS DISK BUBBLE-DEVICES [J].

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[7]

HUBERT A, UNPUB IEEE T MAGNETI

[8] ORIENTATION DEPENDENCE OF PROPAGATION MARGIN OF 1-MU-M BUBBLE CONTIGUOUS-DISK DEVICES - CLUES AND CURES [J].

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SHIR, CC .

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[9] CHARGED WALL BEHAVIOR IN 1-MU-M BUBBLE IMPLANTED STRUCTURES [J].

LIN, YS ;

DOVE, DB ;

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SHIR, CC .

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[10] STRAIN PROFILES IN ION-IMPLANTED BUBBLE-DEVICES INVESTIGATED BY TRANSMISSION ELECTRON-DIFFRACTION [J].

OMI, T ;

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JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :2528-2530

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