FREQUENCY-LOCKED 1.3-MU-M AND 1.5-MU-M SEMICONDUCTOR-LASERS FOR LIGHTWAVE SYSTEMS APPLICATIONS

被引：47

作者：

CHUNG, YC

机构：

[1] AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1990年 / 8卷 / 06期

关键词：

D O I：

10.1109/50.54503

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe a simple technique for frequency-locking 1.3-and 1.5-µm lasers to an excited-state atomic transition of noble gases using the optogalvanic effect. Many of the atomic transitions useful for these spectral regions are tabulated. Also, the performance of frequency-locked lasers under direct frequency modulation is analyzed. It is shown that neither the frequency stability nor the receiver sensitivity shows any serious degradation when a frequency-locked laser is used in a frequency shift keying (FSK) transmission experiment. © 1990 IEEE

引用

页码：869 / 876

页数：8

共 45 条

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