DENSITY OF STATES STUDY OF MAGNETRON-SPUTTERED A-SI-H BY CAPACITANCE AND SPACE-CHARGE-LIMITED CURRENT (SCLC) MEASUREMENTS

被引：5

作者：

KRIEGER, G

GANGOPADHYAY, S

RUBEL, H

SCHRODER, B

GEIGER, J

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 77-8卷

关键词：

D O I：

10.1016/0022-3093(85)90667-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：327 / 330

页数：4

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[7]

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[8] EFFECT OF HYDROGEN ON THE DENSITY OF GAP STATES IN REACTIVELY SPUTTERED AMORPHOUS-SILICON [J].

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[9] BULK AND SURFACE-STATES ANALYSIS IN A-SI-H BY SCHOTTKY AND MIS TUNNEL-DIODES CAPACITANCE AND CONDUCTANCE MEASUREMENTS [J].

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[10] AN IMPROVED FIELD-EFFECT ANALYSIS FOR THE DETERMINATION OF THE PSEUDOGAP-STATE DENSITY IN AMORPHOUS-SEMICONDUCTORS [J].

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