SURFACE-STRUCTURES OF SI(111)/GA

被引：13

作者：

ZEGENHAGEN, J ^{[1
]}

ARTACHO, E ^{[1
]}

FREELAND, PE ^{[1
]}

PATEL, JR ^{[1
]}

机构：

[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1994年 / 70卷 / 03期

关键词：

D O I：

10.1080/01418639408240246

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ga-produced surface structures on Si(111) are investigated with X-ray standing waves and ab-initio total-energy minimization calculations. We present evidence for the existence of four different room-temperature structures of annealed surfaces, with one of them being most probably metastable. Other metastable structures can be produced by room-temperature deposition experiments without annealing.

引用

页码：731 / 745

页数：15

共 34 条

[1]

ARTACHO E, 1994, IN PRESS

[2] RELATIVISTIC NORM-CONSERVING PSEUDOPOTENTIALS [J].