GALLIUM-ARSENIDE TRAVELING-WAVE FIELD-EFFECT TRANSISTORS

被引：34

作者：

HOLDEN, AJ ^{[1
]}

DANIEL, DR ^{[1
]}

DAVIES, I ^{[1
]}

OXLEY, CH ^{[1
]}

REES, HD ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

关键词：

D O I：

10.1109/T-ED.1985.21910

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：61 / 66

页数：6

共 13 条

[1] A MONOLITHIC GAAS 1-13-GHZ TRAVELING-WAVE AMPLIFIER
AYASLI, Y
MOZZI, RL
VORHAUS, JL
REYNOLDS, LD
PUCEL, RA
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) : 976 - 981
[2] MONOLITHIC 2-20 GHZ GAAS TRAVELING-WAVE AMPLIFIER
AYASLI, Y
REYNOLDS, LD
VORHAUS, JL
HANES, L
[J]. ELECTRONICS LETTERS, 1982, 18 (14) : 596 - 598
[3] DISTRIBUTED AMPLIFICATION
GINZTON, EL
HEWLETT, WR
JASBERG, JH
NOE, JD
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1948, 36 (08): : 956 - 969
[4] HOLDEN AJ, 1984, JUL P INT C SIM SEM
[5] HOLDEN AJ, 1983, APR IEE C MICR CIRC
[6] A MESFET DISTRIBUTED AMPLIFIER WITH 2 GHZ BANDWIDTH
JUTZI, W
[J]. PROCEEDINGS OF THE IEEE, 1969, 57 (06) : 1195 - &
[7] MICROWAVE FIELD-EFFECT TRANSISTORS 1976
LIECHTI, CA
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) : 279 - 330
[8] THEORY OF TRAVELING-WAVE TRANSISTORS
PODGORSKI, AS
WEI, LY
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) : 1845 - 1853
[9] REN YA, 1981, IEDM, P684
[10] TEM WAVE PROPERTIES OF MICROSTRIP TRANSMISSION LINES
SILVESTER, P
[J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1968, 115 (01): : 43 - +