COMPARISON OF MOBILITY-LIMITING MECHANISMS IN HIGH-MOBILITY SI1-XGEX HETEROSTRUCTURES

被引:107
作者
MONROE, D
XIE, YH
FITZGERALD, EA
SILVERMAN, PJ
WATSON, GP
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 04期
关键词
D O I
10.1116/1.586471
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Relaxed Si1-xGex buffers on Si have yielded record low-temperature mobilities for both electrons and holes in the Si-Ge system. We analyze various limitations on this mobility, including scattering from remote dopants, background impurities, interface roughness, alloy fluctuations, and the specific strain, morphology, and threading dislocations expected for relaxed alloy buffers. Comparison with experiments eliminates all but the first four as potential limitations on the mobility.
引用
收藏
页码:1731 / 1737
页数:7
相关论文
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