SWITCHING OF SEMICONDUCTOR REFLECTIVITY BY GIANT PULSE LASER ( SI GE INP INSB GA)ASXP1-X) 50-100-MJ GIANT PULSE E )

被引：45

作者：

SOOY, WR

BORTFELD, PD

GELLER, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1964年 / 5卷 / 03期

关键词：

D O I：

10.1063/1.1754049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：54 / &

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[1] GENERATION OF GIANT OPTICAL MASER PULSES USING SEMI-CONDUCTOR MIRROR
CARMICHAEL, CH
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[2] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K
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[3] RUBY LASER Q-SWITCHING ELEMENTS USING PHTHALOCYANINE MOLECULES IN SOLUTION
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LUZZI, JJ
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 182 - &
[4] CONTRIBUTION OF CURRENT CARRIERS IN THE REFLECTION OF LIGHT FROM SEMICONDUCTORS
SOSNOWSKI, L
[J]. PHYSICAL REVIEW, 1957, 107 (04): : 1193 - 1194