EFFECT OF IN IMPURITY ON CRYSTALLIZATION KINETICS OF (SE.7TE.3)(100-X)IN-X SYSTEM

被引:22
作者
MEHRA, RM
GURINDER, AG
MATHUR, PC
机构
[1] Department of Electronic Sciences, University of Delhi South Campus, New Delhi
来源
JOURNAL OF THERMAL ANALYSIS | 1995年 / 45卷 / 03期
关键词
CRYSTALLIZATION KINETICS; SE-TE-IN SYSTEM;
D O I
10.1007/BF02548774
中图分类号
O414.1 [热力学];
学科分类号
摘要
The effect of In impurity on the crystallization kinetics and the changes taking place in the structure of (Se7Te3) have been studied by DTA measurements at different heating rates (alpha=5 deg . min(-1), 10 deg . min(-1), 15 deg . min(-1) and 20 deg . min(-1)). From the heating rate dependence of the values of T-g, T-c and T-p, the glass transition activation energy (E(l)) and the crystallization activation energy (E(c)) have been obtained for different compositions of (Se7Te3)(100-x)In-x (0 less than or equal to x less than or equal to 20). The variation of viscosity as a function of temperature has been evaluated using Vogel-Tamman-Fulcher equation. The crystallization data are analysed using Kissinger's and Matusita's approach for non-isothermic crystallization. It has been found that for samples containing In=0, 10, 15, 20 at%, three dimensional nucleation is predominant whereas for samples containing In=5 at%, two dimensional nucleation is the dominant mechanism. The compositional dependence of T-g and crystallization kinetics are discussed in terms of the modification of the structure of the Se-Te system.
引用
收藏
页码:405 / 415
页数:11
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