DEFECT MICROSTRUCTURE IN LASER-ASSISTED MODULATION MOLECULAR-BEAM EPITAXY GAAS ON (100) SILICON

被引：9

作者：

CHRISTOU, A

STOEMENOS, J

FLEVARIS, N

KOMNINOU, P

GEORGAKILAS, A

机构：

[1] ARISTOTELIAN UNIV SALONIKA,DEPT PHYS,SALONIKA,GREECE

[2] FDN RES & TECHNOL HELLAS,HERAKLIO CRETE,GREECE

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 07期

关键词：

D O I：

10.1063/1.346380

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two-dimensional growth of GaAs on (100) silicon has been achieved by combining laser-assisted growth and modulation molecular-beam epitaxy techniques. The misfit dislocations were shown to form a regular cross-grid with satellite reflections characteristic of a two-dimensional homoepitaxial growth as also revealed by the perfection of the moiré patterns of the GaAs/Si interface. The few antiphase domains generated at the interface were observed to annihilate very fast. The top surface of GaAs was free of antiphase domains. Planar defects such as stacking faults and microtwins are also eliminated.

引用

页码：3298 / 3302

页数：5

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