REALIZATION OF TENSILE STRAIN ON GAAS SUBSTRATES FOR POLARIZATION-INDEPENDENT OPTICAL MODULATION

被引：5

作者：

CHAN, YC

TADA, K

机构：

[1] Department of Electronic Engineering, University of Tokyo, Bunkyo-ku, Tokyo, 113

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 12期

关键词：

D O I：

10.1109/68.262547

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The quantum confined Stark effect of tensile-strained GaAs-InAlAs quantum wells grown on top of a relaxed nonpseudomorphic InAlAs grid layer on GaAs substrates has been studied. It is demonstrated by waveguide absorption measurements for the first time that polarization independent optical modulation in tensile-strained GaAs wells is possible at a short wavelength range of around 870 nm.

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页码：1380 / 1383

页数：4

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