CONSIDERATIONS FOR POLARIZATION INSENSITIVE OPTICAL SWITCHING AND MODULATION USING STRAINED INGAAS/INALAS QUANTUM-WELL STRUCTURE

被引：13

作者：

WAN, HW

CHONG, TC

CHUA, SJ

机构：

[1] Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 08期

关键词：

D O I：

10.1109/68.84467

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An approach for designing polarization-insensitive optical switching and modulating devices using strained-layer InGaAs/InAlAs multiple quantum wells grown on InP substrate with different well sizes and Ga mole fractions is presented.

引用

页码：730 / 732

页数：3

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