THE INFLUENCE OF GRAPHITE BOAT MATERIAL ON THE PURITY OF LPE INGAAS

被引:2
作者
KUPHAL, E
机构
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1987年 / 43卷 / 01期
关键词
D O I
10.1007/BF00615203
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:37 / 40
页数:4
相关论文
共 6 条
[1]   HIGH-PURITY INP AND INGAASP GROWN BY LIQUID-PHASE EPITAXY [J].
COOK, LW ;
TASHIMA, MM ;
TABATABAIE, N ;
LOW, TS ;
STILLMAN, GE .
JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) :475-484
[2]  
KUPHAL E, 1983, J ELECTRON MATER, V12, P743, DOI 10.1007/BF02676801
[3]   PHASE-DIAGRAMS OF INGAASP, INGAAS AND INP LATTICE-MATCHED TO (100)INP [J].
KUPHAL, E .
JOURNAL OF CRYSTAL GROWTH, 1984, 67 (03) :441-457
[4]  
NICKEL H, 1986, 65TBR26 RES I GERM P
[5]   LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-PURITY LATTICE MATCHED GAXIN1-XAS ON LESS-THAN111 GREATER-THAN-B INP [J].
OLIVER, JD ;
EASTMAN, LF .
JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (04) :693-712
[6]   DONOR IDENTIFICATION IN LIQUID-PHASE EPITAXIAL INDIUM-PHOSPHIDE [J].
SKOLNICK, MS ;
DEAN, PJ ;
GROVES, SH ;
KUPHAL, E .
APPLIED PHYSICS LETTERS, 1984, 45 (09) :962-964