ANALYSIS OF EXOELECTRON GLOW CURVES

被引：38

作者：

HOLZAPFEL, G

机构：

[1] Physikalisch-Technische Bundesanstalt, Braunschweig

来源：

PHYSICA STATUS SOLIDI | 1969年 / 33卷 / 01期

关键词：

D O I：

10.1002/pssb.19690330121

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Term data (activation energy, frequency factor) of electron traps in semiconductors are determined by analysing exoelectron‐emission (EEE) glow curves using the same methods which are applied on thermoluminescence glow curves. The mechanism of exoemission is generally not considered. This paper regards the influence of the work function on EEE intensity and temperature position of EEE glow curves. Corrections of EEE glow curves have to be observed at low temperatures and at small frequency factors for exact evaluations. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：235 / +

页数：1

共 15 条

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