EXPERIMENTAL-EVIDENCE FOR AN ASSOCIATED DEFECT MODEL FOR THE NEUTRON GENERATED ASGA CENTER IN GALLIUM-ARSENIDE

被引：2

作者：

GOLTZENE, A

MEYER, B

SCHWAB, C

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1984年 / 82卷 / 3-4期

关键词：

D O I：

10.1080/00337578408215783

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：307 / 311

页数：5

共 8 条

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SCHLUTER, M ;

BARAFF, GA .

PHYSICAL REVIEW B, 1983, 27 (04) :2545-2547

[2] ELECTRON-PARAMAGNETIC RESONANCE DETERMINATION OF THE GENERATION RATE OF AS ANTISITES IN FAST-NEUTRON IRRADIATED GAAS [J].

GOLTZENE, A ;

MEYER, B ;

SCHWAB, C .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3117-3120

[3]

GOLTZENE A, UNPUB

[4] THE OBSERVATION OF HIGH-CONCENTRATIONS OF ARSENIC ANTI-SITE DEFECTS IN ELECTRON-IRRADIATED NORMAL-TYPE GAAS BY X-BAND ELECTRON-PARAMAGNETIC-RES [J].

GOSWAMI, NK ;

NEWMAN, RC ;

WHITEHOUSE, JE .

SOLID STATE COMMUNICATIONS, 1981, 40 (04) :473-477

[5]

HAUSMANN A, 1981, VERH DPG, P184

[6] MANIFESTATIONS OF DEEP LEVELS POINT-DEFECTS IN GAAS [J].

MARTIN, GM ;

MAKRAMEBEID, S .

PHYSICA B & C, 1983, 116 (1-3) :371-383

[7] ASGA ANTISITE DEFECTS IN GAAS [J].

WEBER, ER ;

SCHNEIDER, J .

PHYSICA B & C, 1983, 116 (1-3) :398-403

[8]

WORNER R, 1982, APPL PHYS LETT, V40, P141, DOI 10.1063/1.93016

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