OPTICAL DETERMINATION OF STRAINS IN HETEROSTRUCTURES - GAAS/SI AS AN EXAMPLE

被引：68

作者：

LANDA, G ^{[1
]}

CARLES, R ^{[1
]}

FONTAINE, C ^{[1
]}

BEDEL, E ^{[1
]}

MUNOZYAGUE, A ^{[1
]}

机构：

[1] CNRS,AUTOMAT DANAL SYST LAB,LP 8001,F-31077 TOULOUSE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 01期

关键词：

D O I：

10.1063/1.343904

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：196 / 200

页数：5

共 23 条

[1] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1983, 27 (02) :985-1009

[2]

CARDONA M, 1982, TOP APPL PHYS, V50, P19

[3] SI-SUBSTRATE PREPARATION FOR GAAS/SI MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE UNDER A SI FLUX [J].

CASTAGNE, J ;

BEDEL, E ;

FONTAINE, C ;

MUNOZYAGUE, A .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (01) :246-248

[4]

CASTAGNE J, 1988, J APPL PHYS, V64, P2076

[5] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J].

CERDEIRA, F ;

BUCHENAUER, CJ ;

CARDONA, M ;

POLLAK, FH .

PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :580-+

[6] EFFECTS OF UNIAXIAL STRESS ON ELECTROREFLECTANCE SPECTRUM OF GE AND GAAS [J].

CHANDRASEKHAR, M ;

POLLAK, FH .

PHYSICAL REVIEW B, 1977, 15 (04) :2127-2144

[7] 3RD ORDER ELASTIC CONSTANTS OF GALLIUM ARSENIDE [J].

DRABBLE, JR ;

BRAMMER, AJ .

SOLID STATE COMMUNICATIONS, 1966, 4 (09) :467-&

[8] MOLECULAR-BEAM EPITAXY AND OPTICAL CHARACTERIZATION OF GAAS ON CAF2 SUBSTRATES [J].

FONTAINE, C ;

BENARFA, H ;

BEDEL, E ;

MUNOZYAGUE, A ;

LANDA, G ;

CARLES, R .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) :208-212

[9] INFLUENCE OF MOVPE GROWTH-PARAMETERS ON THE STRUCTURAL AND OPTICAL-PROPERTIES OF GAAS ON SI(100) [J].

FREUNDLICH, A ;

GRENET, JC ;

NEU, G ;

LEYCURAS, A ;

VERIE, C ;

GIBART, P ;

LANDA, G ;

CARLES, R .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :487-493

[10] LOW-TEMPERATURE ELASTIC CONSTANTS OF GALLIUM ARSENIDE [J].

GARLAND, CW ;

PARK, KC .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (02) :759-&

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