INFLUENCE OF MOVPE GROWTH-PARAMETERS ON THE STRUCTURAL AND OPTICAL-PROPERTIES OF GAAS ON SI(100)

被引：25

作者：

FREUNDLICH, A ^{[1
]}

GRENET, JC ^{[1
]}

NEU, G ^{[1
]}

LEYCURAS, A ^{[1
]}

VERIE, C ^{[1
]}

GIBART, P ^{[1
]}

LANDA, G ^{[1
]}

CARLES, R ^{[1
]}

机构：

[1] UNIV PAUL SABATIER,PHYS SOLIDE LAB,CNRS,UA 74,F-31002 TOULOUSE,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(88)90571-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：487 / 493

页数：7

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[10] EVIDENCE BY RAMAN-SPECTROSCOPY AND X-RAY-DIFFRACTION OF A STRONG INFLUENCE OF H2O TRACES ON THE METALORGANIC VAPOR-PHASE EPITAXY OF GAAS ON SI [J].

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