GAINASP/INP SEMICONDUCTOR VERTICAL GRIN-LENS FOR SEMICONDUCTOR OPTICAL-DEVICES

被引：7

作者：

ELYUMIN, S

KOMORI, K

ARAI, S

机构：

[1] Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 05期

关键词：

D O I：

10.1109/68.285554

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A GaInAsP/InP vertical GRIN-Lens (VGL), which is suitable for monolithic integration with semiconductor laser diodes (LDs) or Semiconductor laser amplifiers (SLAs), was fabricated for the first time. A narrow FWHM of vertical far-field pattern of 6 degree was experimentally obtained with 8 layers of GRIN core region (8 mum thick) and InP cladding layers. An Integration of this VGL with a taper waveguide SLA with the output width of 10 mum was also demonstrated.

引用

页码：601 / 604

页数：4

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