SURFACE DEGRADATION OF INP DURING CONTACT FORMATION - AN FTIR ANALYSIS

被引：6

作者：

HENRY, J ^{[1
]}

LIVINGSTONE, J ^{[1
]}

机构：

[1] UNIV WESTERN AUSTRALIA,DEPT ELECT & ELECTR ENGN,NEDLANDS,WA 6009,AUSTRALIA

来源：

INFRARED PHYSICS & TECHNOLOGY | 1995年 / 36卷 / 03期

关键词：

D O I：

10.1016/1350-4495(94)00110-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Essential heat treatments required in semiconductor device processing have been shown to change markedly the absorption properties of unprotected surfaces of indium phosphide, implying changes in the chemical bonding at these surfaces. Since there is little evidence of line broadening, these changes may indicate the loss of phosphorus and the creation of a defective non-stoichiometric surface structure. The Fourier Transform Infrared (FTIR) transmission technique also indicated that phosphorus-hydrogen bonds are formed at the surface. The likely consequence of these mechanisms is that devices fabricated under certain temperature conditions can suffer serious degradation.

引用

页码：655 / 659

页数：5