FABRICATION OF SIC BLUE LEDS USING OFF-ORIENTED SUBSTRATES

被引：23

作者：

MATSUSHITA, Y ^{[1
]}

NAKATA, T ^{[1
]}

UETANI, T ^{[1
]}

YAMAGUCHI, T ^{[1
]}

NIINA, T ^{[1
]}

机构：

[1] SANYO ELECT CO LTD,ULSI RES CTR,ANPACHI,GIFU 50301,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 02期

关键词：

Blue LED; Degradation; External quantum efficiency; Liquid phase epitaxy; Off-oriented substrate; SiC; Surface morphology;

D O I：

10.1143/JJAP.29.L343

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SiC blue LEDs were fabricated by the dipping technique, using 6H-SiC substrates whose (000̅1;;)C face varied toward the [11̅2;;0] or [10̅1;;0] direction. The surface morphology of the epitaxial layers on the off-oriented substrates was a striped pattern perpendicular to the off-axis direction. By using off-oriented substrates, the degradation of SiC blue LEDs can be greatly reduced. High-efficiency blue LEDs (12 mcd at 20 mA) were fabricated by increasing the amount of Al dopant in the n-type layer. © 1990 IOP Publishing Ltd.

引用

页码：L343 / L345

页数：3

共 5 条

[1] SILICON-CARBIDE BLUE-LIGHT EMITTING DIODES WITH IMPROVED EXTERNAL QUANTUM EFFICIENCY
HOFFMANN, L
ZIEGLER, G
THEIS, D
WEYRICH, C
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6962 - 6967
[2] FABRICATION OF 6H-SIC LIGHT-EMITTING-DIODES BY A ROTATION DIPPING TECHNIQUE - ELECTROLUMINESCENCE MECHANISMS
IKEDA, M
HAYAKAWA, T
YAMAGIWA, S
MATSUNAMI, H
TANAKA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) : 8215 - 8225
[3] Kuroda N., 1987, 19 C SOL STAT DEV MA, P227
[4] MATSUSHITA Y, 1985, 17TH C SSDM JAP, P253
[5] A NEW DEGRADATION PHENOMENON IN BLUE-LIGHT EMITTING SILICON-CARBIDE DIODES
ZIEGLER, G
THEIS, D
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (04) : 425 - 427

← 1 →