DEVICE LAYER TRANSFER TECHNIQUE USING CHEMI-MECHANICAL POLISHING

被引：2

作者：

HAMAGUCHI, T

ENDO, N

KIMURA, M

ISHITANI, A

机构：

[1] NEC CORP, DIV TECH SERV, MIYAMAE KU, KAWASAKI 213, JAPAN

[2] NEC CORP, MICROELECTR RES LABS, MIYAMAE KU, KAWASAKI 213, JAPAN

[3] NEC CORP, FUNDAMENTAL RES LABS, MIYAMAE KU, KAWASAKI 213, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1984年 / 23卷 / 10期

关键词：

D O I：

10.1143/JJAP.23.L815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L815 / L817

页数：3

共 7 条

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[2]

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[4]

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[5] EPITAXIAL FILM TRANSFER TECHNIQUE FOR PRODUCING SINGLE-CRYSTAL SI FILM ON AN INSULATING SUBSTRATE [J].

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EGAMI, K ;

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HAMAGUCHI, T .

APPLIED PHYSICS LETTERS, 1983, 43 (03) :263-265

[6] SELECTIVE SILICON EPITAXY USING REDUCED PRESSURE TECHNIQUE [J].

TANNO, K ;

ENDO, N ;

KITAJIMA, H ;

KUROGI, Y ;

TSUYA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09) :L564-L566

[7]

VANIELEN JA, 1970, PHILIPS TECH REV, V31, P271

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