EPITAXIAL FILM TRANSFER TECHNIQUE FOR PRODUCING SINGLE-CRYSTAL SI FILM ON AN INSULATING SUBSTRATE

被引：18

作者：

KIMURA, M ^{[1
]}

EGAMI, K ^{[1
]}

KANAMORI, M ^{[1
]}

HAMAGUCHI, T ^{[1
]}

机构：

[1] NEC CORP,DIV RES & DEV PLANNING & TECH SERV,MIYAMAE KU,KAWASAKI,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 03期

关键词：

D O I：

10.1063/1.94320

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：263 / 265

页数：3

相关论文

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[2] THIN SILICON FILM ON INSULATING SUBSTRATE
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