X-RAY ROCKING CURVES FOR SILICON-ON-SAPPHIRE CHARACTERIZATION

[1] BOREL J, 1975, SOS TECHNOLOGY WORKS

[2] CULLEN GW, 1975, 3RD P INT C VAP GROW, P274

[3] GONCHOND JP, 1979, THESIS GRENOBLE

[4] HALF-WIDTH AND PEAK-INTENSITY MEASUREMENT OF A ROCKING CURVE OBTAINED FROM SILICON ON SAPPHIRE USING SOFT-X-RAY BEAMS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) : 3138 - 3140

[5] TRILHE J, 1976, 150 JES M LAS VEG

[6] SAPPHIRE SUBSTRATE MISORIENTATION AND SOS-MOS TRANSISTOR PERFORMANCE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) : 1080 - 1086

[7] WEITZEL CE, 1978, J ELECTROCHEM SOC, V125, P794

[1] BOREL J, 1975, SOS TECHNOLOGY WORKS

[2] CULLEN GW, 1975, 3RD P INT C VAP GROW, P274

[3] GONCHOND JP, 1979, THESIS GRENOBLE

[4] HALF-WIDTH AND PEAK-INTENSITY MEASUREMENT OF A ROCKING CURVE OBTAINED FROM SILICON ON SAPPHIRE USING SOFT-X-RAY BEAMS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) : 3138 - 3140

[5] TRILHE J, 1976, 150 JES M LAS VEG

[6] SAPPHIRE SUBSTRATE MISORIENTATION AND SOS-MOS TRANSISTOR PERFORMANCE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) : 1080 - 1086

[7] WEITZEL CE, 1978, J ELECTROCHEM SOC, V125, P794