EVALUATION OF BINARY AND TERNARY MELTS FOR THE LOW-TEMPERATURE LIQUID-PHASE EPITAXIAL-GROWTH OF SILICON

被引：8

作者：

LEE, SH

GREEN, MA

机构：

[1] Centre for Photovoltaic Devices and Systems, University of New South Wales, Kensington

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1991年 / 20卷 / 08期

关键词：

SI; LIQUID PHASE EPITAXY; LOW TEMPERATURE GROWTH;

D O I：

10.1007/BF02669529

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Liquid-phase-epitaxy allows the growth of good quality layers at low temperature, although this advantage is yet to be fully exploited for silicon. Silicon solubility was investigated in a range of binary and ternary metal alloys to identify suitable low temperature combinations. Gold based alloys were determined to be the most suitable for the growth of lightly doped layers, with Au-Bi and Au-Pb alloys giving high silicon solubilities at temperatures below 400-degrees-C. Liquid-phase-epitaxy of silicon was demonstrated over the 380-450-degrees-C range from such alloys.

引用

页码：635 / 641

页数：7

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