共 30 条
SILICON LIQUID-PHASE EPITAXY - A REVIEW
被引:22
作者:

BALIGA, BJ
论文数: 0 引用数: 0
h-index: 0
机构:
关键词:
D O I:
10.1149/1.2108542
中图分类号:
O646 [电化学、电解、磁化学];
学科分类号:
081704 ;
摘要:
引用
收藏
页码:C5 / C14
页数:10
相关论文
共 30 条
[1]
A SIMPLE METHOD FOR PREDICTING THE FORWARD BLOCKING GAIN OF GRIDDED FIELD-EFFECT DEVICES WITH RECTANGULAR GRIDS
[J].
ADLER, MS
;
BALIGA, BJ
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SOLID-STATE ELECTRONICS,
1980, 23 (07)
:735-740

ADLER, MS
论文数: 0 引用数: 0
h-index: 0

BALIGA, BJ
论文数: 0 引用数: 0
h-index: 0
[2]
BORON AUTODOPING DURING SILICON LIQUID-PHASE EPITAXY
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BALIGA, BJ
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981, 128 (01)
:161-165

BALIGA, BJ
论文数: 0 引用数: 0
h-index: 0
[3]
DOPANT DISTRIBUTION IN SILICON LIQUID-PHASE EPITAXIAL LAYERS - MELTBACK EFFECTS
[J].
BALIGA, BJ
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979, 126 (01)
:138-143

BALIGA, BJ
论文数: 0 引用数: 0
h-index: 0
机构: General Electric Company, Corporate Research and Development Center, Schenectady
[4]
MORPHOLOGY OF SILICON EPITAXIAL LAYERS GROWN BY UNDERCOOLING OF A SATURATED TIN MELT
[J].
BALIGA, BJ
.
JOURNAL OF CRYSTAL GROWTH,
1977, 41 (02)
:199-204

BALIGA, BJ
论文数: 0 引用数: 0
h-index: 0
机构:
GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301 GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301
[5]
HIGH LIFETIME SILICON LIQUID-PHASE EPITAXY
[J].
BALIGA, BJ
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982, 129 (03)
:665-666

BALIGA, BJ
论文数: 0 引用数: 0
h-index: 0
[6]
ISOTHERMAL SILICON LIQUID-PHASE EPITAXY FROM SUPER-SATURATED TIN
[J].
BALIGA, BJ
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978, 125 (04)
:598-600

BALIGA, BJ
论文数: 0 引用数: 0
h-index: 0
[7]
BURIED-GRID FIELD-CONTROLLED THYRISTORS FABRICATED USING SILICON LIQUID-PHASE EPITAXY
[J].
BALIGA, BJ
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IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980, 27 (11)
:2141-2145

BALIGA, BJ
论文数: 0 引用数: 0
h-index: 0
[8]
BURIED-GRID FABRICATION BY SILICON LIQUID-PHASE EPITAXY
[J].
BALIGA, BJ
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APPLIED PHYSICS LETTERS,
1979, 34 (11)
:789-790

BALIGA, BJ
论文数: 0 引用数: 0
h-index: 0
机构: General Electric Company, Corporate Research and Development Center, Schenectady
[9]
KINETICS OF EPITAXIAL-GROWTH OF SILICON FROM A TIN MELT
[J].
BALIGA, BJ
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977, 124 (10)
:1627-1631

BALIGA, BJ
论文数: 0 引用数: 0
h-index: 0
机构:
GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301 GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301
[10]
LIQUID-PHASE EPITAXIAL SILICON DIODES - N-EPITAXIAL LAYERS ON BORON-DOPED SUBSTRATES
[J].
BALIGA, BJ
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980, 127 (05)
:1168-1172

BALIGA, BJ
论文数: 0 引用数: 0
h-index: 0