SILICON LIQUID-PHASE EPITAXY - A REVIEW

被引:22
作者
BALIGA, BJ
机构
关键词
D O I
10.1149/1.2108542
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:C5 / C14
页数:10
相关论文
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[1]   A SIMPLE METHOD FOR PREDICTING THE FORWARD BLOCKING GAIN OF GRIDDED FIELD-EFFECT DEVICES WITH RECTANGULAR GRIDS [J].
ADLER, MS ;
BALIGA, BJ .
SOLID-STATE ELECTRONICS, 1980, 23 (07) :735-740
[2]   BORON AUTODOPING DURING SILICON LIQUID-PHASE EPITAXY [J].
BALIGA, BJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) :161-165
[3]   DOPANT DISTRIBUTION IN SILICON LIQUID-PHASE EPITAXIAL LAYERS - MELTBACK EFFECTS [J].
BALIGA, BJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (01) :138-143
[4]   MORPHOLOGY OF SILICON EPITAXIAL LAYERS GROWN BY UNDERCOOLING OF A SATURATED TIN MELT [J].
BALIGA, BJ .
JOURNAL OF CRYSTAL GROWTH, 1977, 41 (02) :199-204
[5]   HIGH LIFETIME SILICON LIQUID-PHASE EPITAXY [J].
BALIGA, BJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) :665-666
[6]   ISOTHERMAL SILICON LIQUID-PHASE EPITAXY FROM SUPER-SATURATED TIN [J].
BALIGA, BJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) :598-600
[8]   BURIED-GRID FABRICATION BY SILICON LIQUID-PHASE EPITAXY [J].
BALIGA, BJ .
APPLIED PHYSICS LETTERS, 1979, 34 (11) :789-790
[9]   KINETICS OF EPITAXIAL-GROWTH OF SILICON FROM A TIN MELT [J].
BALIGA, BJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (10) :1627-1631