BURIED-GRID FABRICATION BY SILICON LIQUID-PHASE EPITAXY

被引：4

作者：

BALIGA, BJ

机构：

[1] General Electric Company, Corporate Research and Development Center, Schenectady

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 11期

关键词：

D O I：

10.1063/1.90682

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper describes the application of silicon liquid phase epitaxy for the fabrication of buried-grid regions. It is demonstrated here that closely spaced buried-grid regions can be fabricated by this technique if the melt is supersaturated prior to epitaxial growth.

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页码：789 / 790

页数：2

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