DOPANT DISTRIBUTION IN SILICON LIQUID-PHASE EPITAXIAL LAYERS - MELTBACK EFFECTS

The influence of meltback on dopant distribution in silicon liquid phase epitaxial layers has been examined for heavily boron-doped substrates. Meltback has been shown to produce a graded p-type layer at the interface between the layer and the substrate. An analysis is presented to demonstrate that this layer has an exponentially graded profile and several experiments are described which demonstrate that the boron is uniformly distributed in the melt during epitaxial growth. In addition, growth conditions are described to prevent the formation of this p-type layer and to achieve an abrupt interface between the epitaxial layer and the substrate. © 1979, The Electrochemical Society, Inc. All rights reserved.