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REDUCTION OF AUTODOPING
被引:15
作者
:
BOZLER, CO
论文数:
0
引用数:
0
h-index:
0
机构:
SPERRY RAND CORP,GAINESVILLE,FL 32601
SPERRY RAND CORP,GAINESVILLE,FL 32601
BOZLER, CO
[
1
]
机构
:
[1]
SPERRY RAND CORP,GAINESVILLE,FL 32601
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1975年
/ 122卷
/ 12期
关键词
:
D O I
:
10.1149/1.2134114
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:1705 / 1709
页数:5
相关论文
共 7 条
[1]
IMPURITY DISTRIBUTION IN EPITAXIAL GROWTH
[J].
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
;
RODER, A
论文数:
0
引用数:
0
h-index:
0
RODER, A
;
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(3P1)
:802
-&
[2]
SILICON EPITAXIAL LAYERS WITH ABRUPT INTERFACE IMPURITY PROFILES
[J].
GUPTA, DC
论文数:
0
引用数:
0
h-index:
0
GUPTA, DC
;
YEE, R
论文数:
0
引用数:
0
h-index:
0
YEE, R
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(11)
:1561
-+
[3]
IMPURITY REDISTRIBUTION PROCESSES IN EPITAXIAL SILICON LAYERS
[J].
JOYCE, BA
论文数:
0
引用数:
0
h-index:
0
JOYCE, BA
;
WEAVER, JC
论文数:
0
引用数:
0
h-index:
0
WEAVER, JC
;
MAULE, DJ
论文数:
0
引用数:
0
h-index:
0
MAULE, DJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(11)
:1100
-&
[4]
ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE
[J].
KENNEDY, DP
论文数:
0
引用数:
0
h-index:
0
KENNEDY, DP
;
MURLEY, PC
论文数:
0
引用数:
0
h-index:
0
MURLEY, PC
;
KLEINFELDER, W
论文数:
0
引用数:
0
h-index:
0
KLEINFELDER, W
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1968,
12
(05)
:399
-+
[5]
POGGE HB, 1970, CHEM VAPOUR DEPOSITI, P767
[6]
CAPACITANCE-VOLTAGE MEASUREMENTS WITH A MERCURY-SILICON DIODE
[J].
SEVERIN, PJ
论文数:
0
引用数:
0
h-index:
0
SEVERIN, PJ
;
POODT, GJ
论文数:
0
引用数:
0
h-index:
0
POODT, GJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(10)
:1384
-&
[7]
IMPURITY ATOM TRANSFER DURING EPITAXIAL DEPOSITION OF SILICON
[J].
SKELLY, G
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SKELLY, G
;
ADAMS, AC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
ADAMS, AC
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(01)
:116
-122
←
1
→
共 7 条
[1]
IMPURITY DISTRIBUTION IN EPITAXIAL GROWTH
[J].
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
;
RODER, A
论文数:
0
引用数:
0
h-index:
0
RODER, A
;
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(3P1)
:802
-&
[2]
SILICON EPITAXIAL LAYERS WITH ABRUPT INTERFACE IMPURITY PROFILES
[J].
GUPTA, DC
论文数:
0
引用数:
0
h-index:
0
GUPTA, DC
;
YEE, R
论文数:
0
引用数:
0
h-index:
0
YEE, R
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(11)
:1561
-+
[3]
IMPURITY REDISTRIBUTION PROCESSES IN EPITAXIAL SILICON LAYERS
[J].
JOYCE, BA
论文数:
0
引用数:
0
h-index:
0
JOYCE, BA
;
WEAVER, JC
论文数:
0
引用数:
0
h-index:
0
WEAVER, JC
;
MAULE, DJ
论文数:
0
引用数:
0
h-index:
0
MAULE, DJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(11)
:1100
-&
[4]
ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE
[J].
KENNEDY, DP
论文数:
0
引用数:
0
h-index:
0
KENNEDY, DP
;
MURLEY, PC
论文数:
0
引用数:
0
h-index:
0
MURLEY, PC
;
KLEINFELDER, W
论文数:
0
引用数:
0
h-index:
0
KLEINFELDER, W
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1968,
12
(05)
:399
-+
[5]
POGGE HB, 1970, CHEM VAPOUR DEPOSITI, P767
[6]
CAPACITANCE-VOLTAGE MEASUREMENTS WITH A MERCURY-SILICON DIODE
[J].
SEVERIN, PJ
论文数:
0
引用数:
0
h-index:
0
SEVERIN, PJ
;
POODT, GJ
论文数:
0
引用数:
0
h-index:
0
POODT, GJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(10)
:1384
-&
[7]
IMPURITY ATOM TRANSFER DURING EPITAXIAL DEPOSITION OF SILICON
[J].
SKELLY, G
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SKELLY, G
;
ADAMS, AC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
ADAMS, AC
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(01)
:116
-122
←
1
→