LIQUID-PHASE EPITAXIAL SILICON DIODES - N-EPITAXIAL LAYERS ON BORON-DOPED SUBSTRATES

被引：6

作者：

BALIGA, BJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 05期

关键词：

D O I：

10.1149/1.2129840

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1168 / 1172

页数：5

共 13 条

[1] DOPANT DISTRIBUTION IN SILICON LIQUID-PHASE EPITAXIAL LAYERS - MELTBACK EFFECTS [J].

BALIGA, BJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (01) :138-143

[2] MORPHOLOGY OF SILICON EPITAXIAL LAYERS GROWN BY UNDERCOOLING OF A SATURATED TIN MELT [J].

BALIGA, BJ .

JOURNAL OF CRYSTAL GROWTH, 1977, 41 (02) :199-204

[3] ISOTHERMAL SILICON LIQUID-PHASE EPITAXY FROM SUPER-SATURATED TIN [J].

BALIGA, BJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) :598-600

[4] BURIED-GRID FABRICATION BY SILICON LIQUID-PHASE EPITAXY [J].

BALIGA, BJ .

APPLIED PHYSICS LETTERS, 1979, 34 (11) :789-790

[5] KINETICS OF EPITAXIAL-GROWTH OF SILICON FROM A TIN MELT [J].

BALIGA, BJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (10) :1627-1631

[6]

D'Asaro L. A., 1969, Semiconductor silicon, P233

[7] LIQUID-PHASE EPITAXY OF SILICON AT VERY LOW-TEMPERATURES [J].

GIRAULT, B ;

CHEVRIER, F ;

JOULLIE, A ;

BOUGNOT, G .

JOURNAL OF CRYSTAL GROWTH, 1977, 37 (02) :169-177

[8] LIQUID-PHASE EPITAXIAL-GROWTH OF SILICON IN SELECTED AREAS [J].

KIM, HJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) :1394-&

[9] DETERMINATION OF MINORITY-CARRIER LIFETIME FROM REVERSE RECOVERY TRANSIENT OF PNR DIODES [J].

LEWIS, DC .

SOLID-STATE ELECTRONICS, 1975, 18 (01) :87-91

[10] DETERMINATION OF DEEP TRAP LEVELS IN SILICON USING ION-IMPLANTATION AND CV-MEASUREMENTS [J].

SCHULZ, M .

APPLIED PHYSICS, 1974, 4 (03) :225-236

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