BORON AUTODOPING DURING SILICON LIQUID-PHASE EPITAXY

被引：3

作者：

BALIGA, BJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 01期

关键词：

D O I：

10.1149/1.2127359

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：161 / 165

页数：5

共 14 条

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[5]

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[10] SILICON EPITAXIAL LAYERS WITH ABRUPT INTERFACE IMPURITY PROFILES [J].

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