LASER CHEMICAL VAPOR-DEPOSITION OF TIN DOTS - A COMPARISON OF THEORETICAL AND EXPERIMENTAL RESULTS

被引：27

作者：

CONDE, O ^{[1
]}

KAR, A ^{[1
]}

MAZUMDER, J ^{[1
]}

机构：

[1] UNIV ILLINOIS,CTR LASER AIDED MAT PROC LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 02期

关键词：

D O I：

10.1063/1.352351

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A mathematical model for the concentration profile of TiCl4 at the top surface of an Incoloy 800H substrate placed inside a laser chemical vapor deposition (LCVD) reactor is developed by using the three-dimensional transient mass diffusion equation. The model is used for studying the spatial variation of the thickness of TiN dots deposited by LCVD, using a CO2 laser and a reactive atmosphere consisting of TiCl4, N2, and H-2. By assuming that the chemical reaction is first-order with respect to TiCl4, and that the sticking coefficient of TiN at the substrate surface is temperature dependent, the deposited TiN film is found to have a volcanic profile under certain conditions, which is in good agreement with experimental results.

引用

页码：754 / 761

页数：8

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