GAAS MULTIPLE QUANTUM-WELL MICRORESONATOR MODULATORS GROWN ON SILICON SUBSTRATES

被引：3

作者：

BARNES, P

WOODBRIDGE, K

ROBERTS, C

STRIDE, AA

RIVERS, A

WHITEHEAD, M

PARRY, G

ZHANG, X

STATONBEVAN, A

ROBERTS, JS

BUTTON, C

机构：

[1] UNIV LONDON,IMPERIAL COLL SCI TECHNOL & MED,DEPT MAT,INTERDISCIPLINARY RES CTR SEMICOND,LONDON SW7 2BP,ENGLAND

[2] UNIV SHEFFIELD,SERC,CENT FACIL MAT 3-5,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

[3] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1992年 / 24卷 / 02期

关键词：

D O I：

10.1007/BF00625823

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report new results on the modulation characteristics of GaAs/AlGaAs asymmetric Fabry-Perot modulators grown on silicon substrates. We discuss factors affecting device performance and evaluate these by growing p-i-n quantum well diodes, and multilayer reflector stacks on silicon. Using data from these test structures we have designed an asymmetric microresonator modulator and achieve, experimentally, a 40% reflection change with only 5 V and a contrast ratio of 7.4 dB, also with 5 V.

引用

页码：S177 / S192

页数：16

共 22 条

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